The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2008
Filed:
Mar. 25, 2004
Tsutomu Ogihara, Niigata-ken, JP;
Fujio Yagihashi, Niigata-ken, JP;
Yoshitaka Hamada, Niigata-ken, JP;
Takeshi Asano, Niigata-ken, JP;
Motoaki Iwabuchi, Niigata-ken, JP;
Hideo Nakagawa, Oumihachiman, JP;
Masaru Sasago, Hirakata, JP;
Tsutomu Ogihara, Niigata-ken, JP;
Fujio Yagihashi, Niigata-ken, JP;
Yoshitaka Hamada, Niigata-ken, JP;
Takeshi Asano, Niigata-ken, JP;
Motoaki Iwabuchi, Niigata-ken, JP;
Hideo Nakagawa, Oumihachiman, JP;
Masaru Sasago, Hirakata, JP;
Shin-Etsu Chemical Co., Ltd., Tokyo, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
According to the invention, the thin film having the thickness controlled desirably can be easily formed using common semiconductor processes. Provided is a coating liquid for forming the porous film having an excellent dielectric property and mechanical property. Specifically, the coating liquid for forming a porous film comprises the condensation product obtained by condensation of one or more silicate compounds represented by the formula (XO)(SiO)(HO)and one more organosilate compounds represented by the formula (XO)(RSiO)(HO). Thus, the porous insulating film having sufficient mechanical strength and dielectric properties for use in the semiconductor manufacturing process can be manufactured.