The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2008
Filed:
May. 11, 2005
Applicants:
Asad M. Haider, Plano, TX (US);
Alfred J. Griffin, Jr., Dallas, TX (US);
Kelly J. Taylor, Allen, TX (US);
Inventors:
Asad M. Haider, Plano, TX (US);
Alfred J. Griffin, Jr., Dallas, TX (US);
Kelly J. Taylor, Allen, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention provides a method of forming a interconnect barrier layer. In the method, physical vapor deposition of barrier materialis performed within an openinglocated in a dielectric layerof a substrate. RF plasma etching of the barrier materialthat is deposited in the openingoccurs simultaneously with conducting the physical vapor deposition of the barrier material