The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 19, 2008

Filed:

Nov. 22, 2005
Applicants:

Dun-nian Yaung, Taipei, TW;

Shou-gwo Wuu, Hsin-Chu, TW;

Ho-ching Chien, Hsinchu, TW;

Chien-hsien Tseng, Hsinchu, TW;

Inventors:

Dun-Nian Yaung, Taipei, TW;

Shou-Gwo Wuu, Hsin-Chu, TW;

Ho-Ching Chien, Hsinchu, TW;

Chien-Hsien Tseng, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A new method to form an image sensor device is achieved. The method comprises forming an image sensing array in a substrate comprising a plurality of light detecting diodes with spaces between the diodes. A first dielectric layer is formed overlying the diodes but not the spaces. The first dielectric layer has a first refractive index. A second dielectric layer is formed overlying the spaces but not the diodes. The second dielectric layer has a second refractive index that is larger than the first refractive index. A new image sensor device is disclosed.


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