The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2008
Filed:
Jun. 27, 2006
Jun-ya Ishizaki, Annaka, JP;
Jun-ya Ishizaki, Annaka, JP;
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Abstract
A p-n junction interfaceis formed between an n-type ZnTeO(0.5≦x≦1) layerand a p-type ZnTeO(0≦x<0.5) layer, and the n-type ZnTeO layerand/or p-type ZnTeO layerare formed by thermal oxidation of the main surficial side of a p-type ZnTe wafer. This is successful in providing a Zn-base semiconductor light emitting device and a method of fabricating thereof possibly be improved in the emission efficiency at a light emitting layer composed of a Zn-base semiconductor light emitting device.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile