The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2008
Filed:
Jun. 16, 2005
Ian Latchford, Sunnyvale, CA (US);
Christopher Dennis Bencher, San Jose, CA (US);
Yuxiang Wang, San Jose, CA (US);
Mario Dave Silvetti, Morgan Hill, CA (US);
Ian Latchford, Sunnyvale, CA (US);
Christopher Dennis Bencher, San Jose, CA (US);
Yuxiang Wang, San Jose, CA (US);
Mario Dave Silvetti, Morgan Hill, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method for forming a patterned amorphous carbon layer in a semiconductor stack, including forming an amorphous carbon layer on a substrate and forming a silicon containing photoresist layer on top of the amorphous carbon layer. Thereafter, the method includes developing a pattern transferred into the resist layer with a photolithographic process and etching through the amorphous carbon layer in at least one region defined by the pattern in the resist layer, wherein a resist layer hard mask is formed in an outer portion of the photoresist layer during etching.