The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2008
Filed:
Apr. 07, 2005
Kazuo Kawamura, Kawasaki, JP;
Kazuo Kawamura, Kawasaki, JP;
Fujtisu Limited, Kawasaki, JP;
Abstract
The method for fabricating a semiconductor device comprises the step of forming a Co filmon a gate electrodehaving a gate length Lof below 50 nm including 50 nm; the first thermal processing step of making thermal processing to react the Co filmand the gate electrodewith each other to form a CoSi filmon the upper part of the gate electrode; the step of selectively etching off the unreacted part of the Co film; and the second thermal processing step of making thermal processing to react the CoSi filmand the gate electrodewith each other to form a CoSifilmon the upper part of the gate electrode, wherein in the first thermal processing step, the CoSi filmis formed so that the ratio h/w of the height h of the CoSi filmto the width w of the CoSi filmis below 0.7 including 0.7.