The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2008
Filed:
Jul. 13, 2005
Toshiharu Furukawa, Essex Junction, VT (US);
Mark Charles Hakey, Fairfax, VT (US);
Steven John Holmes, Guilderland, NY (US);
David Vaclav Horak, Essex Junction, VT (US);
Peter H. Mitchell, Jericho, VT (US);
Larry Alan Nesbit, Williston, VT (US);
Toshiharu Furukawa, Essex Junction, VT (US);
Mark Charles Hakey, Fairfax, VT (US);
Steven John Holmes, Guilderland, NY (US);
David Vaclav Horak, Essex Junction, VT (US);
Peter H. Mitchell, Jericho, VT (US);
Larry Alan Nesbit, Williston, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Vertical field effect transistors having a channel region defined by at least one semiconducting nanotube and methods for fabricating such vertical field effect transistors by chemical vapor deposition using a spacer-defined channel. Each nanotube is grown by chemical vapor deposition catalyzed by a catalyst pad positioned at the base of a high-aspect-ratio passage defined between a spacer and a gate electrode. Each nanotube grows in the passage with a vertical orientation constrained by the confining presence of the spacer. A gap may be provided in the base of the spacer remote from the mouth of the passage. Reactants flowing through the gap to the catalyst pad participate in nanotube growth.