The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 12, 2008

Filed:

Mar. 30, 2004
Applicants:

Hiroki Yoshikawa, Niigata-ken, JP;

Yukio Inazuki, Niigata-ken, JP;

Noriyasu Fukushima, Niigata-ken, JP;

Hideo Kaneko, Niigata-ken, JP;

Satoshi Okazaki, Niigata-ken, JP;

Inventors:

Hiroki Yoshikawa, Niigata-ken, JP;

Yukio Inazuki, Niigata-ken, JP;

Noriyasu Fukushima, Niigata-ken, JP;

Hideo Kaneko, Niigata-ken, JP;

Satoshi Okazaki, Niigata-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/00 (2006.01); B32B 17/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

A photomask blank comprising a multilayer film including at least four layers of different compositions, wherein the interface between the layers is moderately graded in composition; a phase shift mask blank comprising a phase shift film of at least two layers including a surface layer of a composition based on a zirconium silicide compound and a substrate adjacent layer of a composition based on a molybdenum silicide compound, and a further layer between one layer and another layer of a different composition, the further layer having a composition moderately graded from that of the one layer to that of the other layer; a phase shift mask blank comprising a phase shift film including a plurality of layers containing a metal and silicon in different compositional ratios which are stacked in such order that a layer having a higher etching rate is on the substrate side and a layer having a lower etching rate is on the surface side. The invention provides a photomask blank, typically a phase shift mask blank, which satisfies optical properties such as transmittance, reflectance and refractive index at an exposure wavelength of interest, and has an etched pattern with a minimal line edge roughness, and a photomask, typically a phase shift mask obtained therefrom.


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