The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2008
Filed:
Oct. 04, 2005
Ming-hsiang Hsueh, Hsinchu, TW;
Ming-Hsiang Hsueh, Hsinchu, TW;
MACRONIX International Co., Ltd., Hsinchu, TW;
Abstract
A chalcogenide random access memory (CRAM) is provided. The CRAM includes a substrate, a first dielectric layer, a bottom electrode, a top electrode, a second dielectric layer, a modified chalcogenide spacer and an un-modified chalcogenide thin film. The first dielectric layer is disposed on the substrate and the bottom electrode is located inside the first dielectric layer. The second dielectric layer is disposed on the first dielectric layer and it has at least one opening exposing the bottom electrode. The modified chalcogenide spacer is disposed on the sidewall of the opening exposing portion of the bottom electrode. The top electrode is disposed on the bottom electrode. The un-modified chalcogenide thin film is disposed between the modified chalcogenide spacer and the top electrode and also disposed between the bottom electrode and the top electrode. The modified chalcogenide spacer has a better etching resistivity than the un-modified chalcogenide thin film.