The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2008
Filed:
Dec. 03, 2004
Yoko Uchida, Kawasaki, JP;
Yoko Uchida, Kawasaki, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A semiconductor device which can enhance adhesiveness between a barrier conductive film and an organic insulating film, and prevent film-fall-off, and the manufacturing technique thereof are provided. After a silicon nitride film is formed on the main surface of semiconductor substrate, an organic insulating film is formed on the silicon nitride film. The organic insulating film is formed of a material having a dielectric constant lower than that of a silicon oxide film. Subsequently, wiring grooves are formed in the silicon nitride film and the organic insulating film by means of a photolithography technique and etching technique. An oxide film is formed by irradiating the organic insulating film with ultraviolet rays by use of excimer lamp. The ultraviolet-ray irradiation is performed in an atmosphere containing oxygen. A tantalum film serving as a barrier conductive film is formed on the organic insulating film with the mediation of the oxide film.