The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2008
Filed:
Aug. 24, 2005
Mikio Hongo, Yokohama, JP;
Sachio Uto, Yokohama, JP;
Mineo Nomoto, Yokohama, JP;
Toshihiko Nakata, Hiratsuka, JP;
Mutsuko Hatano, Kokubunji, JP;
Shinya Yamaguchi, Mitaka, JP;
Makoto Ohkura, Fuchu, JP;
Mikio Hongo, Yokohama, JP;
Sachio Uto, Yokohama, JP;
Mineo Nomoto, Yokohama, JP;
Toshihiko Nakata, Hiratsuka, JP;
Mutsuko Hatano, Kokubunji, JP;
Shinya Yamaguchi, Mitaka, JP;
Makoto Ohkura, Fuchu, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
Arrangements (e.g., methods) for manufacturing a display device, including irradiating an amorphous semiconductor film formed on a substrate with an excimer laser beam to convert the amorphous semiconductor film into a polycrystalline semiconductor film; and irradiating predetermined areas of the polycrystalline semiconductor film intermittently with a continuous wave laser beam while a position of the substrate with respect to the continuous wave laser beam is scanned, crystal grains larger than those of the polycrystalline semiconductor film other than the predetermined areas are formed in each of the predetermined areas locally in the polycrystalline semiconductor film, wherein first thin film transistors are formed in the predetermined areas while second thin film transistors are formed in the polycrystalline semiconductor film other than the predetermined areas thereof.