The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2008
Filed:
Aug. 23, 2005
Wen-shiang Liao, Miao-Li Hsien, TW;
Wei-tsun Shiau, Kao-Hsiung Hsien, TW;
Wen-Shiang Liao, Miao-Li Hsien, TW;
Wei-Tsun Shiau, Kao-Hsiung Hsien, TW;
United Microelectronics Corp., Hsin-Chu, TW;
Abstract
A method for fabricating a three-dimensional multi-gate device includes steps of providing a semiconductor substrate and forming a silicon fin on the semiconductor substrate, the silicon fin having a top surface and two side surfaces; forming a gate structure on the silicon fin, the gate structure partially covering the top surface and the two side surfaces of the silicon fin, and forming a spacer structure on both sides of the gate structure; forming two doped regions in the silicon fin under both sides of the gate structure; and forming a stress-adjusting layer covering the gate structure.