The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2008
Filed:
Sep. 18, 2003
Peter J. Silverman, Palo Alto, CA (US);
Peter J. Silverman, Palo Alto, CA (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Techniques, methods, and structures disclosed in relation to extreme ultraviolet (EUV) lithography in semiconductor processing. In one exemplary implementation, a method may comprise using ion beam deposition to deposit a first multilayer stack of thin films on a substrate to planarize and smooth surface defects on the substrate. The method includes using atomic layer deposition to deposit a second multilayer stack of thin films on the first multilayer stack of thin films. The second multilayer stack of thin films may comprise an extreme ultraviolet reflective multilayer stack. The second multilayer stack of thin films may comprise fewer surface defects than the first multilayer stack of thin films. The method may further comprise processing an extreme ultraviolet mask blank to form an extreme ultraviolet reflective mask.