The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2008
Filed:
Sep. 14, 2005
Won-mo Park, Gyeonggi-do, KR;
Jae-choel Paik, Gyeonggi-do, KR;
Du-heon Song, Gyeonggi-do, KR;
Dong-hyun Kim, Gyeonggi-do, KR;
Chang-sub Lee, Gyeonggi-do, KR;
Won-Mo Park, Gyeonggi-do, KR;
Jae-Choel Paik, Gyeonggi-do, KR;
Du-Heon Song, Gyeonggi-do, KR;
Dong-Hyun Kim, Gyeonggi-do, KR;
Chang-Sub Lee, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A recess gate-type semiconductor device includes a gate electrode having a recessed portion at least partially covering a recess trench in an active region, and source/drain regions disposed in the active region that are separated by the gate electrode. The recess trench is separated from sidewalls of a device isolation region in a first direction and contacts sidewalls of the device isolation region in a second direction. The width of the recess trench of the active region in the second direction may be greater than the width of the source/drain regions in the second direction, and the recessed portion of the gate electrode may have tabs protruding in the first direction at its corners. Therefore, the semiconductor device has excellent junction leakage current and excellent refresh characteristics.