The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2008
Filed:
May. 04, 2006
Zhong Dong, San Jose, CA (US);
Chuck Jang, Fremont, CA (US);
Chia-shun Hsiao, Cupertino, CA (US);
Promos Technologies Inc., Hsin-Chu, TW;
Abstract
A method and apparatus are disclosed for reducing the concentration of chlorine and/or other bound contaminants within a semiconductor oxide composition that is formed by chemical vapor deposition (CVD) using a semiconductor-element-providing reactant such as dichlorosilane (DCS) and an oxygen-providing reactant such as NO. In one embodiment, a DCS-HTO film is annealed by heating NO gas to a temperature in the range of about 825° C. to about 950° C. so as to trigger exothermic decomposition of the NO gas and flowing the heated gas across the DCS-HTO film so that disassociated atomic oxygen radicals within the heated NO gas can transfer disassociating energy to chlorine atoms bound within the DCS-HTO film and so that the atomic oxygen radicals can fill oxygen vacancies within the semiconductor-oxide matrix of DCS-HTO film. An improved ONO structure may be formed with the annealed DCS-HTO film for use in floating gate or other memory applications.