The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2008
Filed:
Oct. 20, 2005
Ching-wei Chen, Hsin-Chu Hsien, TW;
Chih-cheng Hsieh, Hsin-Chu Hsien, TW;
Chien-chang Huang, Hsin-Chu Hsien, TW;
Ching-Wei Chen, Hsin-Chu Hsien, TW;
Chih-Cheng Hsieh, Hsin-Chu Hsien, TW;
Chien-Chang Huang, Hsin-Chu Hsien, TW;
PixArt Imaging Inc., Hsin-Chu Hsien, TW;
Abstract
This invention provides a CMOS image sensor having a pinned photodiode. A P substrate is provided having thereon a P well. The P well is adjacent to a light-sensing region of the CMOS image sensor. A gate electrode of a transfer transistor of the CMOS image sensor is formed on the P well. A self-aligned implantation is performed to form N-type diode diffusion within the light-sensing region. An oblique ion implantation process is then performed to form N-type pocket diffusion directly under the gate electrode. Spacers are formed on sidewalls of the gate electrode. A surface P+ pinning diffusion region is then formed in the diode diffusion region.