The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2008
Filed:
Sep. 27, 2004
Timothy J. Guiney, Battle Ground, WA (US);
Rao Annapragada, Union City, CA (US);
Subhash Deshmukh, Vancouver, WA (US);
Chia Cheng Cheng, San Jose, CA (US);
Timothy J. Guiney, Battle Ground, WA (US);
Rao Annapragada, Union City, CA (US);
Subhash Deshmukh, Vancouver, WA (US);
Chia Cheng Cheng, San Jose, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method for in-situ monitoring a process in a plasma processing system having a plasma processing chamber is disclosed. The method includes positioning a substrate in the plasma processing chamber. The method also includes striking a plasma within the plasma processing chamber while the substrate is disposed within the plasma processing chamber. The method further includes obtaining a measured self-bias voltage that exists after the plasma is struck, the measured self-bias voltage value having a first value when the plasma is absent and at least a second value different from the first value when the plasma is present. The method also includes correlating the measured self-bias voltage value with an attribute of the process, if the measured self-bias voltage value is outside of a predefined self-bias voltage value envelope.