The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 29, 2008

Filed:

Mar. 24, 2005
Applicants:

Valeri F. Tsvetkov, Durham, NC (US);

David Phillip Malta, Raleigh, NC (US);

Jason Ronald Jenny, Wake Forest, NC (US);

Inventors:

Valeri F. Tsvetkov, Durham, NC (US);

David Phillip Malta, Raleigh, NC (US);

Jason Ronald Jenny, Wake Forest, NC (US);

Assignee:

Cree, Inc., Durham, NC (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 21/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

An apparatus and method for growing bulk single crystals of silicon carbide is provided. The apparatus includes a sublimation chamber with a silicon vapor species phase outlet that allows the selective passage of atomic silicon vapor species while minimizing the concurrent passage of other vapor phase species. The apparatus can provide control of vapor phase stoichiometry within the sublimation chamber, which in turn can allow the production of bulk silicon carbide single crystals with reduced intrinsic point defects concentration.


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