The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2008
Filed:
Nov. 17, 2003
Wanmo Wong, Menlo Park, CA (US);
Karunakaran Muthusamy, Fremont, CA (US);
Wanmo Wong, Menlo Park, CA (US);
Karunakaran Muthusamy, Fremont, CA (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Non-volatile memory device, driver, and method is described that utilizes write or erase cycle tracking to interrupt or stop a non-volatile memory programming or erase operation at a selected point to interrupt/stop execution or simulate power loss at a specific point. This ability allows for a deterministic and repeatable testing process of all write or erase cycles of a non-volatile command where the state of floating gate memory cells are changed in the non-volatile memory device. Additionally, this ability to utilize write or erase cycle tracking to interrupt or stop a non-volatile memory programming operation or erasing operation at any selected point enables simulation of power loss at each point in a selected operation that a non-volatile floating gate memory cell is programmed or erased, allowing for improved, deterministic testing of the power loss recovery cycle and faster code/design change verification.