The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2008
Filed:
Jul. 12, 2006
Hsu Kai Yang, Pleasanton, CA (US);
Xi Zeng Shi, Fremont, CA (US);
Po-kang Wang, San Jose, CA (US);
Bruce Yang, Pleasanton, CA (US);
Hsu Kai Yang, Pleasanton, CA (US);
Xi Zeng Shi, Fremont, CA (US);
Po-Kang Wang, San Jose, CA (US);
Bruce Yang, Pleasanton, CA (US);
Headway Technologies, Inc., Milpitas, CA (US);
Applied Spintronill, Inc., Milpitas, CA (US);
Abstract
Magnetic Random Access Memory (MRAM) can be programmed and read as fast as Static Random Access Memory (SRAM) and has the non-volatile characteristics of electrically eraseable programmable read only memory (EEPROM), FLASH EEPROM or one-time-programmable (OTP) EPROM. Due to the randomness of manufacturing process, the magnetic tunnel junctions (MTJ) in MRAM cells will require different row and column current combinations to program and not to disturb the other cells. Based on adaptive current sources for programming, this disclosure teaches methods, designs, test algorithms and manufacturing flows for generating EEPROM, FLASH EEPROM or OTP EPROM like memories from MRAM.