The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 15, 2008
Filed:
May. 26, 2005
Sung-wook Hwang, Seoul, KR;
Chang-jin Kang, Suwon-si, KR;
Kyeong-koo Chi, Seoul, KR;
Sung-hoon Chung, Suwon-si, KR;
Sung-Wook Hwang, Seoul, KR;
Chang-Jin Kang, Suwon-si, KR;
Kyeong-Koo Chi, Seoul, KR;
Sung-Hoon Chung, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A semiconductor device including a transistor and a method of forming thereof are provided. The semiconductor device comprises a metal gate electrode. A lower portion of the metal gate electrode fills a channel trench formed at a predetermined region of a substrate, and an upper portion of the metal gate electrode protrudes on the substrate. A gate insulating layer is interposed between inner sidewalls and a bottom surface of the channel trench, and the metal gate electrode. Source/drain regions are formed at the substrate in both sides of the metal gate electrode.