The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2008
Filed:
Jun. 30, 2003
Shinsuke Sadamitsu, Tokyo, JP;
Nobumitsu Takase, Tokyo, JP;
Hiroyuki Takao, Tokyo, JP;
Koji Sueoka, Tokyo, JP;
Masataka Horai, Tokyo, JP;
Shinsuke Sadamitsu, Tokyo, JP;
Nobumitsu Takase, Tokyo, JP;
Hiroyuki Takao, Tokyo, JP;
Koji Sueoka, Tokyo, JP;
Masataka Horai, Tokyo, JP;
Sumco Corporation, Tokyo, JP;
Abstract
A high-resistance silicon wafer is manufactured, in which a gettering ability and economical efficiency is excellent and an oxygen thermal donor is effectively prevented from being generated in a heat treatment for forming a circuit, which is to be implemented on the side of a device manufacturer. In order to implement the above, a high-temperature heat treatment at 1100° C. or higher is performed on a carbon doped high-resistance and high-oxygen silicon wafer in which specific resistivity is 100 Ωcm or more and a carbon concentration is 5×10to 5×10atoms/cmso that a remaining oxygen concentration becomes 6.5×10atoms/cmor more (Old-ASTM). As this high-temperature treatment, an OD treatment for forming a DZ layer on a wafer surface, a high-temperature annealing treatment for eliminating a COP on the surface layer, a high-temperature heat treatment for forming a BOX layer in a SIMOX wafer manufacturing process and the like can be used.