The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2008
Filed:
Dec. 01, 2004
Ingo Aller, Weil im Schoenbuch, DE;
Veit Gernhoefer, Boeblingen, DE;
Joachim Keinert, Altdorf, DE;
Thomas Ludwig, Sindelfingen, DE;
Ingo Aller, Weil im Schoenbuch, DE;
Veit Gernhoefer, Boeblingen, DE;
Joachim Keinert, Altdorf, DE;
Thomas Ludwig, Sindelfingen, DE;
International Business Machines Corporation, Armonk, NY (US);
Abstract
In a FinFET integrated circuit design, a combined cell structure contains two single cell structures at a first design hierarchy having fin shapes, the cell structures are placed adjacent to each other. The combined fin shapes of the two single cell structures at the first design hierarchy lead to a violation of a design rule related to fin topology in the overlapping region. A fin generation tool thus decides not to place the fins in the first design hierarchy. The fin generation is delegated another design hierarchy resulting in the generation of a single combined fin for both single cells.