The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2008
Filed:
Feb. 28, 2006
Young-eun Lee, Goyang-si, KR;
Seong-ghil Lee, Seongnam-si, KR;
Yu-gyun Shin, Seongnam-si, KR;
Jong-wook Lee, Yongin-si, KR;
Young-pil Kim, Suwon-si, KR;
Young-eun Lee, Goyang-si, KR;
Seong-ghil Lee, Seongnam-si, KR;
Yu-gyun Shin, Seongnam-si, KR;
Jong-wook Lee, Yongin-si, KR;
Young-pil Kim, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A CMOS transistor structure and related method of manufacture are disclosed in which a first conductivity type MOS transistor comprises an enhancer and a second conductivity type MOS transistor comprises a second spacer formed of the same material as the enhancer. The second conductivity type MOS transistor also comprises a source/drain region formed in relation to an epitaxial layer formed in a recess region.