The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2008
Filed:
Jul. 24, 2002
Applicants:
Tadashi Shimazu, Hyogo, JP;
Masahiko Inoue, Hyogo, JP;
Inventors:
Tadashi Shimazu, Hyogo, JP;
Masahiko Inoue, Hyogo, JP;
Assignee:
Mitsubishi Heavy Industries, Ltd., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/00 (2006.01); C23C 14/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A plasma CVD apparatus comprises a reaction container for allowing a reaction for forming a thin film on a semiconductor wafer to be performed, a bias electrode which applies a high frequency bias for sputtering to the semiconductor wafer, a nozzle which supplies SiHgas including at least hydrogen into the reaction container, and a control circuit which on/off-controls the high frequency bias through a switch and which on/off-controls the supply of SiHgas through a flow rate controller based on an opposite control logic to a high frequency bias control logic.