The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2007
Filed:
Mar. 31, 2004
Yi-ling Chen, Taichung, TW;
Yi-Ling Chen, Taichung, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A method for in situ monitoring of particles generated by a reaction by-product film peeling from an interior wall of a reaction chamber of a semiconductor fabrication apparatus to determine reaction chamber condition. The method includes the steps of: exciting the particles to emit light; and comparing an intensity value of the light, measured at a selected time during a predetermined time period, to a predetermined light intensity threshold value. If the intensity value of the light measured at the selected time is above the predetermined light intensity threshold value, the chamber condition is abnormal. If the intensity value of the light is equal to or below the predetermined light intensity threshold value, the chamber condition is normal.