The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2007
Filed:
Oct. 29, 2004
Dong-chan Kim, Seoul, KR;
Chang-jin Kang, Gyeonggi-do, KR;
Byeong-yun Nam, Gyeonggi-do, KR;
Kyeong-koo Ghi, Seoul, KR;
Eun-ae Chung, Gyeonggi-do, KR;
Sung-il Cho, Seoul, KR;
Dong-Chan Kim, Seoul, KR;
Chang-Jin Kang, Gyeonggi-do, KR;
Byeong-Yun Nam, Gyeonggi-do, KR;
Kyeong-Koo Ghi, Seoul, KR;
Eun-Ae Chung, Gyeonggi-do, KR;
Sung-Il Cho, Seoul, KR;
Samsung Electronics Co., Ltd., Kyungki-do, KR;
Abstract
Methods of forming capacitor structures may include forming an insulating layer on a substrate, forming a first capacitor electrode on the insulating layer, forming a capacitor dielectric layer on portions of the first capacitor electrode, and forming a second capacitor electrode on the capacitor dielectric layer such that the capacitor dielectric layer is between the first and second capacitor electrodes. More particularly, the first capacitor electrode may define a cavity therein wherein the cavity has a first portion parallel with respect to the substrate and a second portion perpendicular with respect to the substrate. Related structures are also discussed.