The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 25, 2007

Filed:

Jul. 28, 2005
Applicants:

Doo-young Lee, Seoul, KR;

Yoo-chul Kong, Seoul, KR;

Jong-chul Park, Gyeonggi-do, KR;

Sang-sup Jeong, Gyeonggi-do, KR;

Inventors:

Doo-Young Lee, Seoul, KR;

Yoo-Chul Kong, Seoul, KR;

Jong-Chul Park, Gyeonggi-do, KR;

Sang-Sup Jeong, Gyeonggi-do, KR;

Assignee:

Samsung Eletronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8242 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes a word line structure that extends in a first direction on an active region defined on a substrate. First and second contact pads are formed on the active region at both sides of the word line structure. Bit line structures are electrically connected to the first contact pad and extend in a second direction substantially perpendicular to the first direction. An insulation layer structure is formed on the substrate having the bit line structures. A storage node contact plug is electrically connected to the second contact pad through the insulation layer structure. A storage node electrode, which may be part of a capacitor, is formed on the storage node contact plug. The storage node contact plug has a lower portion and an upper portion having a width wider than that of the lower portion, with vertical sides perpendicular to the first and second directions.


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