The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2007
Filed:
Nov. 29, 2004
Ichiro Takeuchi, College Park, MD (US);
Wei Yang, Hillsboro, OR (US);
Kao-shuo Chang, Greenbelt, MD (US);
Ratnakar D. Vispute, Columbia, MD (US);
Thirumalai Venky Venkatesan, Washington, DC (US);
Ichiro Takeuchi, College Park, MD (US);
Wei Yang, Hillsboro, OR (US);
Kao-Shuo Chang, Greenbelt, MD (US);
Ratnakar D. Vispute, Columbia, MD (US);
Thirumalai Venky Venkatesan, Washington, DC (US);
University of Maryland, College Park, Riverdale, MD (US);
Abstract
A system and method are provided to fabricate thin-films having different physical property parameters or having physical property parameters that continuously change across functionally broadband monolithic device arrays. The fabrication method deposits the thin-film including layers on a substrate of a monolithic chip. The method defines a desired gradient profile of each layer forming the thin-film, each gradient profile including a desired thinnest profile and a desired thickest profile. The method further aligns an aperture of a mask over the substrate to form the thin-film and calculates a shutter speed for the specified gradient profile of each layer across the desired area of the substrate, and deposits each layer on the substrate, through the aperture, as the aperture of the shutter moves at the calculated shutter speed from the desired thinnest profile of each layer to the desired thickest profile of each layer.