The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2007
Filed:
Apr. 30, 2004
Thomas Hecht, Dresden, DE;
Uwe Schröder, Dresden, DE;
Ulrich Mantz, Dresden, DE;
Stefan Jakschik, Dresden, DE;
Andreas Orth, Dresden, DE;
Thomas Hecht, Dresden, DE;
Uwe Schröder, Dresden, DE;
Ulrich Mantz, Dresden, DE;
Stefan Jakschik, Dresden, DE;
Andreas Orth, Dresden, DE;
Infineon Technologies AG, Munich, DE;
Abstract
The present invention relates to a method for determining the depth of a buried structure in a semiconductor wafer. According to the invention, the layer behavior of the semiconductor wafer which is brought about by the buried structure when the semiconductor wafer is irradiated with electromagnetic radiation in the infrared range and arises as a result of the significantly longer wavelengths of the radiation used in comparison with the lateral dimensions of the buried structure is utilized to determine the depth of the buried structure by spectrometric and/or ellipsometric methods.