The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2007
Filed:
Dec. 17, 2004
Yong-jin Kim, Gyeonggi-do, KR;
Hyun-kyu Kang, Seoul, KR;
Seung-young Son, Gyeonggi-do, KR;
Gyung-jin Min, Seoul, KR;
Yong-Jin Kim, Gyeonggi-do, KR;
Hyun-Kyu Kang, Seoul, KR;
Seung-Young Son, Gyeonggi-do, KR;
Gyung-Jin Min, Seoul, KR;
Samsung Electronics Co., Ltd, , KR;
Abstract
An etching end point of a plasma etch is determined by defining an etch-stop condition. A layer formed on a substrate is etched using a plasma. A luminous intensity of the plasma is measured to determine a first luminous intensity. The luminous intensity is measured again after a predetermined time to determine a second luminous intensity. A determination is made whether a disturbance occurs. Compensation is applied to the measured luminous intensity if the disturbance occurs. A determination is made whether the measured luminous intensity or the compensated luminous intensity satisfies the etch stop condition.