The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2007
Filed:
Dec. 05, 2003
Shunpei Yamazaki, Tokyo, JP;
Toru Mitsuki, Kanagawa, JP;
Kenji Kasahara, Kanagawa, JP;
Taketomi Asami, Kanagawa, JP;
Tamae Takano, Kanagawa, JP;
Takeshi Shichi, Kanagawa, JP;
Chiho Kokubo, Kanagawa, JP;
Yasuyuki Arai, Kanagawa, JP;
Shunpei Yamazaki, Tokyo, JP;
Toru Mitsuki, Kanagawa, JP;
Kenji Kasahara, Kanagawa, JP;
Taketomi Asami, Kanagawa, JP;
Tamae Takano, Kanagawa, JP;
Takeshi Shichi, Kanagawa, JP;
Chiho Kokubo, Kanagawa, JP;
Yasuyuki Arai, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
The TFT has a channel-forming region formed of a crystalline semiconductor film obtained by heat-treating and crystallizing an amorphous semiconductor film containing silicon as a main component and germanium in an amount of not smaller than 0.1 atomic % but not larger than 10 atomic % while adding a metal element thereto, wherein not smaller than 20% of the lattice plane {} has an angle of not larger than 10 degrees with respect to the surface of the semiconductor film, not larger than 3% of the lattice plane {} has an angle of not larger than 10 degrees with respect to the surface of the semiconductor film, and not larger than 5% of the lattice plane {} has an angle of not larger than 10 degrees with respect to the surface of the semiconductor film as detected by the electron backscatter diffraction pattern method.