The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2007
Filed:
Apr. 12, 2005
Binet A. Worsham, San Jose, CA (US);
Sean S. Kang, San Ramon, CA (US);
David Wei, Fremont, CA (US);
Vinay Pohray, Fremont, CA (US);
BI Ming Yen, Fremont, CA (US);
Binet A. Worsham, San Jose, CA (US);
Sean S. Kang, San Ramon, CA (US);
David Wei, Fremont, CA (US);
Vinay Pohray, Fremont, CA (US);
Bi Ming Yen, Fremont, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method for etching features in a silicon oxide based dielectric layer over a substrate, comprising performing an etch cycle. A lag etch partially etching features in the silicon oxide based dielectric layer is performed, comprising providing a lag etchant gas, forming a plasma from the lag etchant gas, and etching the etch layer with the lag etchant gas, so that smaller features are etched slower than wider features. A reverse lag etch further etching the features in the silicon oxide based dielectric layer is performed comprising providing a reverse lag etchant gas, which is different from the lag etchant gas and is more polymerizing than the lag etchant gas, forming a plasma from the reverse lag etchant gas, and etching the silicon oxide based dielectric layer with the plasma formed from the reverse lag etchant gas, so that smaller features are etched faster than wider features.