The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2007
Filed:
Apr. 06, 2005
Jae-hak Kim, Seoul, KR;
Kyoung-woo Lee, Seoul, KR;
Hong-jae Shin, Seoul, KR;
Young-joon Moon, Seoul, KR;
Seo-woo Nam, Yongin-si, KR;
Jae-Hak Kim, Seoul, KR;
Kyoung-Woo Lee, Seoul, KR;
Hong-Jae Shin, Seoul, KR;
Young-Joon Moon, Seoul, KR;
Seo-Woo Nam, Yongin-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A method of forming a via contact structure using a dual damascene process is disclosed. According to one embodiment a sacrificial layer is formed on an insulating interlayer during the formation of a preliminary via hole. The sacrificial layer has the same composition as a layer filling the preliminary via hole in a subsequent trench formation process. The sacrificial layer and the layer filling the preliminary via hole are simultaneously removed after the trench formation process is carried out. According to another embodiment, a thin capping oxide layer is formed on an insulating interlayer during the formation of a preliminary via hole. The thin capping oxide layer is removed together with a sacrificial layer after a trench formation process is carried out.