The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2007
Filed:
Sep. 13, 2005
Rajiv V. Joshi, Yorktown Heights, NY (US);
Qiuyi YE, Hopewell Junction, NY (US);
Anirudh Devgan, Austin, TX (US);
Rajiv V. Joshi, Yorktown Heights, NY (US);
Qiuyi Ye, Hopewell Junction, NY (US);
Anirudh Devgan, Austin, TX (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Bitline variable methods and circuits for evaluating static memory cell dynamic stability provide a mechanism for raising the performance of memory arrays beyond present levels/yields. By altering the bitline pre-charge voltage of a static random access memory (SRAM) memory cell, operating the cell and observing changes in performance caused by the changes in the bitline voltage, the dynamic stability of the SRAM cell can be studied over designs and operating environments. Alternatively or in combination, the loading at the outputs of the cell can altered in order to affect the performance of the cell. In addition, cell power supply voltages can be split and set to different levels in order to study the effect of cell asymmetry in combination with bitline pre-charge voltage differences.