The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 04, 2007

Filed:

May. 25, 2004
Applicants:

Hiromu Inoue, Kanagawa-ken, JP;

Toru Tojo, Kanagawa-ken, JP;

Takehiko Nomura, Kanagawa-ken, JP;

Shinichi Imai, Tokyo, JP;

Inventors:

Hiromu Inoue, Kanagawa-ken, JP;

Toru Tojo, Kanagawa-ken, JP;

Takehiko Nomura, Kanagawa-ken, JP;

Shinichi Imai, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A photolithography mask inspection apparatus has at least two sensors. One sensor is configured to sense light transmitted through an object to be inspected, and the other sensor senses light reflected off the object. A first optical system is arranged to expose a first portion of the object with a first light beam, and a second optical system is arranged to expose a second portion of the object, spaced form the first portion, with a second light beam. A third optical system focuses the transmitted light on to the first sensor, as well as the reflected light on to the second sensor. A defect detecting circuit is also provided to detect a defect of the object, based upon image data associated with the reflected and transmitted light.


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