The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2007
Filed:
Oct. 08, 2004
Hirokazu Tsurumaki, Myogi, JP;
Hiroyuki Nagai, Takasaki, JP;
Tomio Furuya, Tamamura, JP;
Makoto Ishikawa, Takasaki, JP;
Hirokazu Tsurumaki, Myogi, JP;
Hiroyuki Nagai, Takasaki, JP;
Tomio Furuya, Tamamura, JP;
Makoto Ishikawa, Takasaki, JP;
Renesas Technology Corporation, Tokyo, JP;
Abstract
In a high frequency power amplifier circuit that supplies a bias to an amplifying FET by a current mirror method, scattering of a threshold voltage Vth due to the scattering of the channel impurity concentration of the FET, and a shift of a bias point caused by the scattering of the threshold voltage Vth and a channel length modulation coefficient λ due to a short channel effect are corrected automatically. The scattering of a high frequency power amplifying characteristic can be reduced as a result.