The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2007
Filed:
Oct. 04, 2004
James W. Adkisson, Jericho, VT (US);
John J. Ellis-monaghan, Grand Isle, VT (US);
Glenn C. Macdougall, Essex Junction, VT (US);
Dale W. Martin, Essex Junction, VT (US);
Kirk D. Peterson, Jericho, VT (US);
Bruce W. Porth, Jericho, VT (US);
James W. Adkisson, Jericho, VT (US);
John J. Ellis-Monaghan, Grand Isle, VT (US);
Glenn C. MacDougall, Essex Junction, VT (US);
Dale W. Martin, Essex Junction, VT (US);
Kirk D. Peterson, Jericho, VT (US);
Bruce W. Porth, Jericho, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of fabricating polysilicon lines and polysilicon gates, the method of including: providing a substrate; forming a dielectric layer on a top surface of the substrate; forming a polysilicon layer on a top surface of the dielectric layer; implanting the polysilicon layer with N-dopant species, the N-dopant species about contained within the polysilicon layer; implanting the polysilicon layer with a nitrogen containing species, the nitrogen containing species essentially contained within the polysilicon layer.