The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2007
Filed:
Jul. 25, 2005
Hsueh-shih Chen, Hsinchu, TW;
Dai-luon Lo, DahuTownship, Miaoli County, TW;
Gwo-yang Chang, Jiali Township, Tainan County, TW;
Chien-ming Chen, Yangmei Township, Taoyuan County, TW;
Hsueh-Shih Chen, Hsinchu, TW;
Dai-Luon Lo, DahuTownship, Miaoli County, TW;
Gwo-Yang Chang, Jiali Township, Tainan County, TW;
Chien-Ming Chen, Yangmei Township, Taoyuan County, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A method for manufacturing a quantum-dot element is disclosed. The method includes the following steps. First, a deposition chamber having at least one atomizer and a substrate-supporting base is provided. The atomizer is connected to a gas inlet and a sample inlet. Afterwards, a sample solution is prepared composed of a plurality of functionalized quantum dots dispersed in a solvent. Simultaneously, a substrate is placed on the substrate-supporting base in the deposition chamber. Finally, the sample solution and a gas are transferred into the atomizer through the sample inlet and the gas inlet respectively for generating quantum-dot droplets, which subsequently deposit on the substrate in the deposition chamber. The quantum-dot element manufactured by the present invention has a uniform distribution of quantum dots that have a small size and, therefore, the quality of the quantum-dot element can be substantially improved.