The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 27, 2007

Filed:

Dec. 03, 2003
Applicants:

Ryosuke Usui, Ichinomiya, JP;

Hideki Mizuhara, Bisai, JP;

Yusuke Igarashi, Isesaki, JP;

Noriaki Kojima, Ogaki, JP;

Noriaki Sakamoto, Gunma, JP;

Inventors:

Ryosuke Usui, Ichinomiya, JP;

Hideki Mizuhara, Bisai, JP;

Yusuke Igarashi, Isesaki, JP;

Noriaki Kojima, Ogaki, JP;

Noriaki Sakamoto, Gunma, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/04 (2006.01); H01R 9/09 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention provides a low-profile and light-weight semiconductor device having improved product reliability and higher frequency performance. A multi-layer interconnect line structure is disposed just under circuit devicesandAn Interlayer insulating filmthat composes a part of the multi-layer interconnect line structure is formed of a material having a relative dielectric constant within a range from 1.0 to 3.7, and a dielectric loss tangent within a range from 0.0001 to 0.02.


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