The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 27, 2007

Filed:

Oct. 27, 2006
Applicants:

Naoki Yamamoto, Kawaguchi, JP;

Hiroyuki Uchiyama, Tachikawa, JP;

Norio Suzuki, Mito, JP;

Eisuke Nishitani, Yatsuo, JP;

Shin'ichiro Kimura, Kunitachi, JP;

Kazuyuki Hozawa, Hachioji, JP;

Inventors:

Naoki Yamamoto, Kawaguchi, JP;

Hiroyuki Uchiyama, Tachikawa, JP;

Norio Suzuki, Mito, JP;

Eisuke Nishitani, Yatsuo, JP;

Shin'ichiro Kimura, Kunitachi, JP;

Kazuyuki Hozawa, Hachioji, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/8236 (2006.01);
U.S. Cl.
CPC ...
Abstract

When an oxidation treatment for regenerating a gate insulating filmis performed after forming gate electrodesA of a polymetal structure in which a WNfilm and a W film are stacked on a polysilicon film, a waferis heated and cooled under conditions for reducing a W oxideon the sidewall of each gate electrodeA. As a result, the amount of the W oxideto be deposited on the surface of the waferis reduced.


Find Patent Forward Citations

Loading…