The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2007
Filed:
Jun. 09, 2004
Applicant:
Pei-yang Yan, Saratoga, CA (US);
Inventor:
Pei-Yang Yan, Saratoga, CA (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
An extreme ultraviolet lithography (EUVL) mask blank may include a multilayer (ML) capping structure on the ML reflective coatings on the substrate. The ML capping structure may include alternating layers of a capping material, e.g., ruthenium, and a material with a lower EUV absorption coefficient, e.g., silicon. The top layer of the ML structure may be a layer of the capping material. Capping interfaces between the layers may provide constructive interference of reflected light.