The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 27, 2007

Filed:

Jun. 16, 2005
Applicants:

Eyal Ginsburg, Tel-Aviv, IL;

Dora Etgar-diamant, Modiin, IL;

Li-peng Wang, San Jose, CA (US);

Inventors:

Eyal Ginsburg, Tel-Aviv, IL;

Dora Etgar-Diamant, Modiin, IL;

Li-Peng Wang, San Jose, CA (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H04R 17/00 (2006.01); H03H 9/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A process comprising, in a vacuum, depositing a bottom electrode layer and a piezoelectric layer over a cavity in a substrate, the cavity being filled with a sacrificial material, patterning and etching the piezoelectric layer and the bottom electrode layer to expose one or more edges of the bottom electrode layer and the piezoelectric layer, treating some or all of the one or more edges to prevent electrical contact between the bottom electrode layer and a top electrode layer, and depositing and etching the top electrode layer. An apparatus comprising a resonator attached to a substrate and suspended over a cavity in the substrate, the resonator comprising a bottom electrode layer and a piezoelectric layer on the bottom electrode layer, both the bottom electrode layer and the piezoelectric layer having been deposited in a vacuum, and a top electrode layer on the piezoelectric layer, wherein one or more edges of the bottom electrode layer and the piezoelectric layer include features that prevent electrical contact between the bottom electrode layer and the top electrode layer.


Find Patent Forward Citations

Ginsburg, Eyal. (2007). Film bulk acoustic resonator (fbar) process using single-step resonator layer deposition (U.S. Patent No. 7299529). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7299529

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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