The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2007
Filed:
Dec. 20, 2005
Guenter Schmid, Hemhofen, DE;
Marcus Halik, Erlangen, DE;
Hagen Klauk, Stuttgart, DE;
Ute Zschieschang, Stuttgart, DE;
Franz Effenberger, Stuttgart, DE;
Markus Schutz, Stuttgart, DE;
Steffen Maisch, Gerlingen, DE;
Steffen Seifritz, Gladbeck, DE;
Frank Buckel, Krefeld, DE;
Guenter Schmid, Hemhofen, DE;
Marcus Halik, Erlangen, DE;
Hagen Klauk, Stuttgart, DE;
Ute Zschieschang, Stuttgart, DE;
Franz Effenberger, Stuttgart, DE;
Markus Schutz, Stuttgart, DE;
Steffen Maisch, Gerlingen, DE;
Steffen Seifritz, Gladbeck, DE;
Frank Buckel, Krefeld, DE;
Infineon Technologies AG, Munich, DE;
Abstract
Embodiments of the invention provide a semiconductor component and a method of manufacture thereof. A semiconductor component comprises: a gate electrode layer adjacent a substrate, and a gate dielectric layer adjacent the gate electrode layer. The gate dielectric layer comprises a monolayer of at least one compound, wherein the compound has an aromatic or a condensed aromatic molecular group. The molecular group is capable of π-π interactions, which stabilize the monolayer. In an embodiment, the semiconductor component is an organic field effect transistor (OFET). In an embodiment of the invention, a method includes forming the monolayer using a liquid phase immersion process.