The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 20, 2007

Filed:

Jun. 24, 2005
Applicants:

Hiroyuki Kitamura, Tokyo, JP;

Yuki Togashi, Tokyo, JP;

Hiroyasu Kitajima, Tokyo, JP;

Noriaki Ikeda, Tokyo, JP;

Yoshitaka Nakamura, Tokyo, JP;

Eiichiro Kakehashi, Tokyo, JP;

Inventors:

Hiroyuki Kitamura, Tokyo, JP;

Yuki Togashi, Tokyo, JP;

Hiroyasu Kitajima, Tokyo, JP;

Noriaki Ikeda, Tokyo, JP;

Yoshitaka Nakamura, Tokyo, JP;

Eiichiro Kakehashi, Tokyo, JP;

Assignee:

Elpida Memory Inc., Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes cylindrical capacitors each including corresponding cylindrical electrodes. Each cylindrical electrode includes hemispherical silicon grains. The hemispherical silicon grains protruding from an upper region of the cylindrical electrode have a large size, and the hemispherical silicon grains protruding from a lower region of the cylindrical electrode have a small size or the lower region of the cylindrical electrode has no hemispherical silicon grains.


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