The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2007
Filed:
Sep. 07, 2005
Norio Ohtani, Kanagawa, JP;
Hirohisa Iizuka, Mie, JP;
Hiroaki Hazama, Mie, JP;
Kazuhito Narita, Mie, JP;
Eiji Kamiya, Mie, JP;
Norio Ohtani, Kanagawa, JP;
Hirohisa Iizuka, Mie, JP;
Hiroaki Hazama, Mie, JP;
Kazuhito Narita, Mie, JP;
Eiji Kamiya, Mie, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A method of fabricating a semiconductor device includes forming on a semiconductor substrate a gate electrode with a gate insulating film being interposed between the substrate and the electrode, forming an insulating film for element isolation protruding from a surface of the semiconductor substrate, forming an oxide film on the surface of the semiconductor substrate with the gate electrode and the element isolation insulating film having been formed, removing the oxide film in a region in which a self-aligned contact hole is to be formed while using a resist pattern for removing the oxide film formed in a region in which the self-aligned contact hole is formed, and etching a part of the element isolation insulating film protruding from the surface of the semiconductor substrate so that said part is substantially on a level with the surface of the semiconductor substrate, while using the resist pattern for removing the oxide film formed in the region in which the self-aligned contact hole is formed.