The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2007
Filed:
Jan. 26, 2005
Dina H. Triyoso, Austin, TX (US);
Olubunmi O. Adetutu, Austin, TX (US);
Dina H. Triyoso, Austin, TX (US);
Olubunmi O. Adetutu, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A CMOS device is provided which comprises (a) a substrate (); (b) a gate dielectric layer () disposed on the substrate, the gate dielectric comprising a metal oxide; (c) an NMOS electrode () disposed on a first region of said gate dielectric; and (d) a PMOS electrode () disposed on a second region of said gate dielectric, the PMOS electrode comprising a conductive metal oxide; wherein the surface of said second region of said gate dielectric comprises a material selected from the group consisting of metal oxynitrides and metal silicon-oxynitrides.