The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 13, 2007

Filed:

Jul. 08, 2005
Applicants:

Michael S. Mazzola, Starkville, MS (US);

Joseph N. Merrett, Starkville, MS (US);

Inventors:

Michael S. Mazzola, Starkville, MS (US);

Joseph N. Merrett, Starkville, MS (US);

Assignees:

Mississippi State University, Mississippi State, MS (US);

SemiSouth Laboratories, Inc., Starkville, MS (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0312 (2006.01); H01L 27/095 (2006.01); H01L 29/47 (2006.01); H01L 29/812 (2006.01); H01L 31/07 (2006.01);
U.S. Cl.
CPC ...
Abstract

A switching element combining a self-aligned, vertical junction field effect transistor with etched-implanted gate and an integrated antiparallel Schottky barrier diode is described. The anode of the diode is connected to the source of the transistor at the device level in order to reduce losses due to stray inductances. The SiC surface in the SBD anode region is conditioned through dry etching to achieve a low Schottky barrier height so as to reduce power losses associated with the turn on voltage of the SBD.


Find Patent Forward Citations

Loading…