The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2007
Filed:
Nov. 24, 2005
Chao-lon Yang, Taipei, TW;
Neng-kuo Chen, Hsinchu, TW;
Teng-chun Tsai, Hsinchu, TW;
Chien-chung Huang, Hsinchu, TW;
Shao-ta Hsu, Tainan, TW;
Chao-Lon Yang, Taipei, TW;
Neng-Kuo Chen, Hsinchu, TW;
Teng-Chun Tsai, Hsinchu, TW;
Chien-Chung Huang, Hsinchu, TW;
Shao-Ta Hsu, Tainan, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method of forming a contact is provided. A substrate having at least two conductive devices is provided. A spacing is located between the two conductive devices. A first dielectric layer is formed over the substrate to cover the two conductive devices and the spacing. A seam is formed in the first dielectric layer within the spacing. Then, a portion of the first dielectric layer is removed to form an opening so that the width of the seam is expanded. A second dielectric layer is formed over the first dielectric layer to fill the opening. A portion of the second dielectric layer and a portion of the first dielectric layer within the spacing are removed until a portion of the surface of the substrate is exposed and a contact opening is formed in the location for forming the contact. Finally, conductive material is deposited to fill the contact opening.