The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2007
Filed:
Feb. 10, 2006
Marshall J. Fleming, Jr., Underhill, VT (US);
Mousa H. Ishaq, Essex Junction, VT (US);
Steven M. Shank, Jericho, VT (US);
Michael C. Triplett, Colchester, VT (US);
Marshall J. Fleming, Jr., Underhill, VT (US);
Mousa H. Ishaq, Essex Junction, VT (US);
Steven M. Shank, Jericho, VT (US);
Michael C. Triplett, Colchester, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A trench capacitor structure in which arsenic contamination is substantially reduced and/or essentially eliminated from diffusing into a semiconductor substrate along sidewalls of a trench opening having a high aspect ratio is provided. The present invention also provides a method of fabricating such a trench capacitor structure as well as a method for detecting the arsenic contamination during the drive-in annealing step. The detection of arsenic for product running through the manufacturing lines uses the effect of arsenic enhanced oxidation. That is, the high temperature oxidation anneal used to drive arsenic into the semiconductor substrate is monitored for thickness. For large levels of arsenic outdiffusion, the oxidation rate will increase resulting in a thicker oxide layer. If such an event is detected, the product that has been through the process steps to form the buried plate up to the drive-in anneal, can be reworked to reduce arsenic contamination.